The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Apr. 28, 2022
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Karl D. Hobart, Alexandria, VA (US);
Marko J. Tadjer, Vienna, VA (US);
Michael A. Mastro, Fairfax, VA (US);
Mark Goorsky, Valencia, CA (US);
Asif Khan, Columbia, SC (US);
Samuel Graham, Jr., Lithonia, GA (US);
Abstract
Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AlN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InAlN), InGaN, AlGaN, InAlGaN, where (0<x≤1, 0<y≤1, 0<x+y≤1).