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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12243910 B1

PDFFull Text
Date of Patent:
Mar. 04, 2025

Filed:

Apr. 12, 2022

Silicon carbide semiconductor device with overlapping electric field relaxation regions and method of manufacturing the same

Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Shinichirou Miyahara, Kariya, JP;

Masatoshi Tsujimura, Nagakute, JP;

Yusuke Yamashita, Nagakute, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Evren Seven

Assistant Examiner:

Cole Leon Lindsey

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 21/76 (2006.01); H01L 21/761 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/046 (2013.01); H01L 21/7602 (2013.01); H01L 21/761 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01);
Abstract

A silicon carbide semiconductor device includes an electric field relaxation layer disposed in a drift layer. The electric field relaxation layer includes a first region having a second conductivity type and disposed at a position deeper than trenches, and a second region having the second conductivity type and disposed between the adjacent trenches to be away from a side surface of each of the adjacent trenches. Each of the first region and the second region is made of an ion implantation layer. The electric field relaxation layer further includes a double implantation region in which the first region and the second region overlap with each other, and the electric field relaxation layer has a peak of a second conductivity type impurity concentration in the double implantation region.

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