The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

May. 17, 2022
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Toshiyuki Matsui, Matsumoto, JP;

Tatsuya Naito, Matsumoto, JP;

Kazuki Kamimura, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 29/0661 (2013.01); H01L 29/0804 (2013.01); H01L 29/32 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device, including a semiconductor substrate having a diode portion, wherein the diode portion includes: an anode region which is provided on a front surface of the semiconductor substrate and is of a second conductivity type; a trench portion provided so as to extend in a predetermined extending direction on the front surface of the semiconductor substrate; a trench contact portion provided on the front surface of the semiconductor substrate; and a plug region which is provided at a lower end of the trench contact portion and is of a second conductivity type, and which has a doping concentration higher than that of the anode region, wherein a plurality of plug regions, each of which being the plug region, is provided separately from each other along the extending direction, is provided.


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