The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Apr. 13, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Shinya Soneda, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/34 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 27/0664 (2013.01); H01L 29/1095 (2013.01); H01L 29/7397 (2013.01); H01L 29/872 (2013.01);
Abstract
In a semiconductor device according to the technology disclosed in the present specification, a temperature detection region is provided with a diffusion layer of a second conductivity type provided on a surface layer of a drift layer of a first conductivity type, a well layer of a first conductivity type provided on a surface layer of the diffusion layer and electrically connected to an anode electrode, and a cathode layer of a first conductivity type provided on a surface layer of the well layer and electrically connected to a cathode electrode.