The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Sep. 30, 2021
International Business Machines Corporation, Armonk, NY (US);
Chanro Park, Clifton Park, NY (US);
Yann Mignot, Slingerlands, NY (US);
Daniel J. Vincent, Madison, WI (US);
Su Chen Fan, Cohoes, NY (US);
Christopher J. Waskiewicz, Rexford, NY (US);
Hsueh-Chung Chen, Cohoes, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments disclosed herein describe methods of forming semiconductor devices. The methods may include etching vias and trenches in a middle-of-line (MOL) layer that has a low-k dielectric layer, a sacrificial nitride layer, and a hard mask layer. The methods may also include depositing a thin nitride layer within the via trench, depositing a carbon layer on the thin nitride layer within the vias and trenches, etching back the thin nitride layer to expose a portion of the hard mask layer, removing the hard mask layer and the carbon layer, and removing the thin nitride layer and the sacrificial nitride layer.