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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12243746 B1

PDFFull Text
Date of Patent:
Mar. 04, 2025

Filed:

Sep. 29, 2022

Method for stripping gallium nitride substrate

Applicant:

Suzhou Metabrain Intelligent Technology Co., Ltd., Jiangsu, CN;

Inventors:

Fen Guo, Jiangsu, CN;

Kang Su, Jiangsu, CN;

Hongtao Man, Jiangsu, CN;

Tuo Li, Jiangsu, CN;

Assignee:

SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD., Jiangsu, CN;

Attorney:

Merchant & Gould P.C.

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 21/268 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); C30B 33/04 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); C30B 33/04 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/3043 (2013.01); H01L 21/30625 (2013.01); H01L 29/66462 (2013.01);
Abstract

Disclosed is a method for stripping a gallium nitride substrate, including: a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof is acquired; an interior of the gallium nitride substrate is scanned and irradiated via the epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and the gallium nitride substrate is separated at the decomposition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device.

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