The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Sep. 24, 2019
Applicant:

President and Fellows of Harvard College, Cambridge, MA (US);

Inventors:

Wei-Ting Chen, Cambridge, MA (US);

Alexander Yutong Zhu, Cambridge, MA (US);

Federico Capasso, Cambridge, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 1/00 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); G02B 5/18 (2006.01);
U.S. Cl.
CPC ...
G02B 1/002 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); G02B 5/1814 (2013.01);
Abstract

Polarization-insensitive metasurfaces using anisotropic nanostructures are disclosed. These anisotropic structures allow for an accurate implementation of phase, group delay, and group delay dispersion, while simultaneously making it possible to realize a polarizationinsensitive, diffraction-limited and achromatic metalens for wavelength, e.g., λ=from about 460 nm to about 700 nm. The approach of polarization-insensitivity can be also applied for other metasurface devices with applications in, e.g., imaging and virtual or augmented reality.


Find Patent Forward Citations

Loading…