The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Sep. 27, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
This semiconductor pressure sensor includes: a first semiconductor substrate; a second semiconductor substrate; and a first piezoresistance element and a second piezoresistance element provided in the second semiconductor substrate. A first recess and a second recess are formed on the first semiconductor substrate, and a first cavity surrounded by the first recess and the second semiconductor substrate and a second cavity surrounded by the second recess and the second semiconductor substrate are formed. The first piezoresistance element is formed at a position overlapping an outer periphery of the first cavity or a position inward of the outer periphery of the first cavity. The second piezoresistance element is formed at a position overlapping an outer periphery of the second cavity, a position overlapping an inner periphery of the second cavity, or a position inward of the outer periphery and outward of the inner periphery of the second cavity.