The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Jun. 05, 2020
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Kazutoshi Tsuyutani, Tokyo, JP;

Yoshihiro Suzuki, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); G01D 11/24 (2006.01); H01L 23/498 (2006.01); H04R 1/04 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0061 (2013.01); B81C 1/00309 (2013.01); G01D 11/245 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2201/0278 (2013.01); B81B 2207/012 (2013.01); B81C 2203/0109 (2013.01); H04R 1/04 (2013.01); H04R 19/04 (2013.01); H04R 2201/003 (2013.01);
Abstract

A sensor package substrate has through holes Vand Vat a position overlapping a sensor chip mounting area. The through hole Vhas a minimum inner diameter at a depth position D, and the through hole Vhas a minimum inner diameter at a depth position Ddifferent from the depth position D. Thus, since the plurality of through holes are formed at a position overlapping the sensor chip mounting area, the diameter of each of the through holes can be reduced. This makes foreign matters unlikely to enter through the through holes, and a reduction in the strength of the substrate is suppressed. In addition, since the depth position Dand depth position Dare located at different depth levels, it is possible to sufficiently maintain the strength of a part of the substrate that is positioned between the through holes Vand V


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