The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Nov. 08, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Wonwoo Choi, Yongin-si, KR;

Inbae Kim, Yongin-si, KR;

Donghun Nam, Yongin-si, KR;

Changwoo Shim, Yongin-si, KR;

Sumin An, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/12 (2023.01); H10K 50/84 (2023.01); H10K 50/844 (2023.01); H10K 59/124 (2023.01); H10K 59/40 (2023.01); G06F 3/041 (2006.01); H10K 50/80 (2023.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/123 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 59/35 (2023.01); H10K 59/38 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/124 (2023.02); H10K 50/844 (2023.02); H10K 59/40 (2023.02); G06F 3/0412 (2013.01); H10K 50/868 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/122 (2023.02); H10K 59/123 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); H10K 59/352 (2023.02); H10K 59/38 (2023.02); H10K 2102/351 (2023.02);
Abstract

Provided is a display device including a substrate, a semiconductor layer on the substrate, an interlayer insulating layer on the semiconductor layer, a source electrode or a drain electrode on the interlayer insulating layer, and connected to the semiconductor layer, an organic light-emitting diode connected to the source electrode or the drain electrode, and a thin film encapsulation layer on the organic light-emitting diode, wherein, a neutral plane corresponding to an impact applied to the thin film encapsulation layer is inside or below the interlayer insulating layer.


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