The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jul. 08, 2020
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Linlin Wang, Beijing, CN;

Juanjuan You, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/824 (2023.01); H10K 50/13 (2023.01); H10K 50/844 (2023.01); H10K 71/00 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/824 (2023.02); H10K 50/131 (2023.02); H10K 50/844 (2023.02); H10K 71/00 (2023.02); H10K 2102/00 (2023.02); H10K 2102/351 (2023.02);
Abstract

The present disclosure provides a light-emitting diode, including a first electrode, a light-emitting functional layer and a second electrode which are stacked, the first electrode is a transparent electrode, the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface of the metal electrode layer away from the light-emitting functional layer. The metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm, and the semiconductor auxiliary layer is made of IZO, a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm. The present disclosure further provides a light emitting device and a method of manufacturing a light emitting diode. The light-emitting diode has high color rendering index and low power consumption.


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