The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Mar. 02, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yuichi Ito, Seoul, KR;

Taichi Igarashi, Seoul, KR;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10B 61/10 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

According to one embodiment, a memory device includes: a switching element including first and second conductive layers, and a variable resistive layer between the first and second conductive layers. The first or second conductive layers includes a first layer, a second layer between the first layer and the variable resistive layer, and a third layer between the first layer and the second layer. Each of the first and second layers is selected from a layer including carbon, a layer including nitrogen and carbon, a layer including nitrogen and titanium, a layer including nitrogen and tantalum, a layer including tungsten, a layer including nitrogen and tungsten, and a layer including platinum. The third layer includes at least one selected from lithium, sodium, magnesium, calcium, titanium, or lanthanum.


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