The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jul. 29, 2024
Applicant:

Xiamen Eochip Semiconductor Co., Ltd, Xiamen, CN;

Inventors:

Yuanyuan Zhou, Xiamen, CN;

Jinghu Li, Xiamen, CN;

Fujie Chen, Xiamen, CN;

Liangqiong Shi, Xiamen, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/2507 (2013.01); H04B 10/69 (2013.01); H04B 10/80 (2013.01);
U.S. Cl.
CPC ...
H04B 10/2507 (2013.01); H04B 10/697 (2013.01); H04B 10/801 (2013.01);
Abstract

A high-speed TIA anti-5G WIFI electromagnetic interference method includes the steps of: stacking a high-voltage capacitor Cand a resistor Rfor constructing a filter circuit on a bare DIE chip of TIA; splitting Cinto two parallel filter capacitors Cand C, which satisfy C=C+C, C=C; constructing differential output to cancel signal interference; constructing electromagnetic interference that cancels out lens leakage by stacking avalanche photodiode APD, Cand gold-plated pad on the vertical axis close to the bare DIE chip, and connecting to the pads through gold wires; stacking Rand Con the vertical axis between pins VDD and VAPD, connecting Rto Cthrough gold wire No. 1, connecting Cto pin VAPD through gold wire No. 2, the gold wire No. 1 and the gold wire No. 2 form a 90° angle to offset the electromagnetic interference leaked by the lens.


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