The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Apr. 19, 2021
Hengdian Group Dmegc Magnetics Co., Ltd, Zhejiang, CN;
Yong Ren, Zhejiang, CN;
Yue He, Zhejiang, CN;
Hailiang Ren, Zhejiang, CN;
Shuai Guo, Zhejiang, CN;
Lei Zhang, Zhejiang, CN;
Dong Zhou, Zhejiang, CN;
Deshuang Chen, Zhejiang, CN;
HENGDIAN GROUP DMEGC MAGNETICS CO., LTD, Zhejiang, CN;
Abstract
Disclosed are a double-sided solar cell and a preparation method therefor. The double-sided solar cell comprises: a silicon wafer having a PN junction, and a front first silicon oxide layer, a front second silicon oxide layer, a front first nitrogen-containing silicon compound layer, a front second nitrogen-containing silicon compound layer, and a front third silicon oxide layer that are located on one side of an N-type layer of the silicon wafer and are sequentially stacked along a direction away from the silicon wafer; and a passivation layer, a back silicon oxide layer, a back first nitrogen-containing silicon compound layer, and a back second nitrogen-containing silicon compound layer that are located on one side of a P-type layer of the silicon wafer and are sequentially stacked along the direction away from the silicon wafer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile