The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Aug. 28, 2014
Japan Science and Technology Agency, Kawaguchi, JP;
Hiroshi Fujioka, Saitama, JP;
Atsushi Kobayashi, Saitama, JP;
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi, JP;
Abstract
Transistors using nitride semiconductor layers as channels were experimentally manufactured. The nitride semiconductor layers were all formed through a sputtering method. A deposition temperature was set at less than 600° C., and a polycrystalline or amorphous InGaAlN layer was obtained. When composition expressed with a general expression InGaAlN (where x+y+z=1.0) falls within a range of 0.3≤x≤1.0 and 0≤z<0.4, a transistorexhibiting an ON/OFF ratio of 10or higher can be obtained. That is, even a polycrystalline or amorphous film exhibits electric characteristics equal to those of a single crystal. Therefore, it is possible to provide a semiconductor device in which constraints to manufacturing conditions are drastically eliminated, and which includes an InGaAlN-based nitride semiconductor layer which is inexpensive and has excellent electric characteristics as a channel.