The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Sep. 02, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Suvi Haukka, Helsinki, FI;

Michael Givens, Phoenix, AZ (US);

Eric Shero, Phoenix, AZ (US);

Jerry Winkler, Gilbert, AZ (US);

Petri Räisänen, Gilbert, AZ (US);

Timo Asikainen, Helsinki, FI;

Chiyu Zhu, Helsinki, FI;

Jaakko Anttila, Helsinki, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/45523 (2013.01); C23C 16/45525 (2013.01); C23C 16/45531 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 29/517 (2013.01);
Abstract

A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.


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