The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Nov. 24, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Sun Ki Min, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01);
Abstract

A semiconductor includes a gate structure on a substrate and including a gate electrode, a source/drain pattern on a side surface of the gate electrode, a source/drain contact connected to the source/drain pattern, a first etching stop film structure on the source/drain contact and the gate structure, the first etching stop film structure including a first lower etching stop film and a silicon nitride film on the first lower etching stop film, and a first via plug inside the first etching stop film structure and connected to the source/drain contact, wherein the first lower etching stop film includes aluminum, and wherein an upper surface of the silicon nitride film is on a same plane as an upper surface of the first via plug.


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