The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Apr. 04, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Bongkwan Baek, Seoul, KR;
Junghwan Chun, Anyang-si, KR;
Jongmin Baek, Seoul, KR;
Koungmin Ryu, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/02123 (2013.01); H01L 21/02126 (2013.01); H01L 21/02167 (2013.01); H01L 21/02362 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device includes a gate structure disposed on a substrate; a source and drain layer disposed on the substrate adjacent the gate structure; a first contact plug disposed on the source and drain layer, an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and a second contact plug disposed on the gate structure.