The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Feb. 25, 2022
Infineon Technologies Ag, Neubiberg, DE;
Alim Karmous, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power semiconductor device includes: a semiconductor body having a first surface and a mesa portion that includes a surface part of the first surface and a body region; at least two trenches extending from the first surface into the semiconductor body along a vertical direction, each trench including a trench electrode and trench insulator insulating the trench electrode from the semiconductor body, the mesa portion being laterally confined by the trenches in a first vertical cross-section along a first lateral direction; and a contact plug in contact with the body region. The contact plug and trench electrode of a first trench laterally overlap at least partially in the first vertical cross-section. A protection structure having a portion arranged within the first trench is arranged between the contact plug and trench electrode of the first trench. The protection structure may be an electrically insulation structure or a protective device structure.