The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Sep. 16, 2021
Imec Vzw, Leuven, BE;
IMEC VZW, , BE;
Abstract
A method for forming a semiconductor device is provided. The method comprises forming a device layer stack comprising an alternating sequence of lower sacrificial layers and channel layers, and a top sacrificial layer over the topmost channel layer, wherein the top sacrificial layer is thicker than each lower sacrificial layer; etching the top sacrificial layer to form a top sacrificial layer portion underneath the sacrificial gate structure; forming a first spacer on end surfaces of the top sacrificial layer portion; etching the channel and lower sacrificial layers while using the first spacer as an etch mask to form channel layer portions and lower sacrificial layer portions; etching the lower sacrificial layer portions to form recesses in the device layer stack, while the first spacer masks the end surfaces of the top sacrificial layer portion; and forming a second spacer in the recesses.