The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Mar. 28, 2024
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyung Rae Cha, Yongin-si, KR;

Dong Uk Kim, Yongin-si, KR;

Sung Ae Jang, Yongin-si, KR;

Ji Hyun Ham, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 27/12 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 27/1214 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.


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