The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Jul. 29, 2022
Applicant:

Ionq, Inc., College Park, MD (US);

Inventor:

Jason Madjdi Amini, Takoma Park, MD (US);

Assignee:

IonQ, Inc., College Park, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/42 (2006.01); G06N 10/40 (2022.01);
U.S. Cl.
CPC ...
H01J 49/422 (2013.01); H01J 49/4265 (2013.01); G06N 10/40 (2022.01);
Abstract

A shaped central electrode is described that is placed between a pair of radio frequency (RF) rails of a trap configured to hold atomic-based qubits to control aspects of the operation of the trap. In one aspect, the shaping may involve forming a pinched region in the middle of the central electrode. The middle of the central electrode may correspond to the middle portion of the trap. The shaping of the central electrode may be achieved in different ways and may involve varying the width of the central electrode. The trap may be fabricated on a glass die or substrate, which itself may be shaped or not. The trap may be fabricated by various methods such as, but not limited to, patterned metal layers on glass or silicon substrates. A quantum information processing (QIP) system is also described that may include a trap having any of these features.


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