The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Nov. 24, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Priyadarshi Panda, Newark, CA (US);

Lei Lian, Fremont, CA (US);

Leonard Michael Tedeschi, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3299 (2013.01); H01J 37/32926 (2013.01); H01L 22/26 (2013.01); H01J 2237/332 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A substrate processing system comprises an etch chamber configured to perform an etch process on a substrate, the etch chamber comprising an optical sensor to generate one or more optical measurements of a film on the substrate during and/or after the etch process. The system further comprises a computing device operatively connected to the etch chamber, wherein the computing device is to: receive the one or more optical measurements of the film; determine, for each optical measurement of the one or more optical measurements, a film thickness of the film; determine an etch rate of the film based on the one or more optical measurements using the determined film thickness of each optical measurement of the one or more optical measurements; and determine a process parameter value of at least one process parameter for a previously performed process that was performed on the substrate based on the etch rate.


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