The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Oct. 12, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Changyoung Lee, Suwon-si, KR;

Kyu-Chang Kang, Suwon-si, KR;

Donghak Shin, Suwon-si, KR;

Hyun-Chul Yoon, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4097 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4097 (2013.01); G11C 7/06 (2013.01); G11C 7/1048 (2013.01); G11C 2207/002 (2013.01);
Abstract

In a sense amplifier circuit, a first transistor is electrically connected between a first bitline and a first node, a first inverter includes a first input terminal and a first output terminal connected to the first node, and a second inverter includes a second input terminal connected to a second node and a second output terminal. A second transistor is electrically connected between the first output terminal and the second node, and a third transistor is electrically connected between the second output terminal and the first node. A precharge circuit transfers a first voltage to the first and second nodes during a first period, and transfers a second voltage higher than the first voltage to the first and second nodes during a second period.


Find Patent Forward Citations

Quick Actions:

Lee, Changyoung. (2025). Sense amplifier circuit with precharge, memory device including the same and sensing method of memory device (U.S. Patent No. 12237000). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12237000

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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