The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Aug. 07, 2020
Applicants:

Nichia Corporation, Anan, JP;

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Hiroaki Tamemoto, Anan, JP;

Minoru Yamamoto, Anan, JP;

Yusuke Sekimoto, Hamamatsu, JP;

Ryota Sugio, Hamamatsu, JP;

Tominori Nakamura, Hamamatsu, JP;

Assignees:

NICHIA CORPORATION, Anan, JP;

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/046 (2014.01); B23K 26/0622 (2014.01); B23K 101/40 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/046 (2013.01); B23K 26/0622 (2015.10); H01L 21/78 (2013.01); B23K 2101/40 (2018.08);
Abstract

This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an m-axis direction of the sapphire substrate.


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