The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Jan. 28, 2022
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Kunifumi Suzuki, Yokkaichi Mie, JP;
Yuuichi Kamimuta, Yokkaichi Mie, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/063 (2023.02); H10N 70/8828 (2023.02);
Abstract
A memory device includes a first interconnect layer, a second interconnect layer, a phase-change layer, and an adjacent layer. The phase-change layer is disposed between the first interconnect layer and the second interconnect layer and configured to reversibly transition between a crystalline state and an amorphous state. The adjacent layer contacts the phase-change layer and comprises tellurium and at least one of titanium, zirconium, or hafnium.