The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Dec. 16, 2021
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Hiromi Seo, Kanagawa, JP;

Takeyoshi Watabe, Kanagawa, JP;

Airi Ueda, Kanagawa, JP;

Yuta Kawano, Kanagawa, JP;

Nobuharu Ohsawa, Kanagawa, JP;

Hiromitsu Kido, Kanagawa, JP;

Satoshi Seo, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/11 (2023.01); H10K 30/20 (2023.01); H10K 50/15 (2023.01); H10K 59/12 (2023.01); H10K 85/60 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 50/11 (2023.02); H10K 30/20 (2023.02); H10K 85/633 (2023.02); H10K 50/156 (2023.02); H10K 59/12 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02);
Abstract

An organic semiconductor device with low driving voltage is provided. The organic semiconductor device includes a layer containing an organic compound between a pair of electrodes. The layer containing an organic compound includes a hole-transport region. The hole-transport region includes a first layer and a second layer. The first layer is positioned between the anode and the second layer. When a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).


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