The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Apr. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae Ho Ahn, Seoul, KR;

Sung-Min Hwang, Hwaseong-si, KR;

Joon-Sung Lim, Seongnam-si, KR;

Bum Kyu Kang, Suwon-si, KR;

Sang Don Lee, Cheonan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A nonvolatile memory device including a mold structure including a plurality of gate electrodes on a substrate, the plurality of gate electrodes including first, second, and third string selection lines sequentially stacked on the substrate; a channel structure that penetrates the mold structure and intersects each of the gate electrodes; a first cutting region that cuts each of the gate electrodes; a second cutting region that is spaced apart from the first cutting region in a first direction and cuts each of the gate electrodes; a first cutting line that cuts the first string selection line between the first cutting region and the second cutting region; a second cutting line that cuts the second string selection line between the first cutting region and the second cutting region; and a third cutting line that cuts the third string selection line between the first cutting region and the second cutting region.


Find Patent Forward Citations

Loading…