The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 05, 2021
Eaton Intelligent Power Limited, Dublin, IE;
Yash Veer Singh, Menomonee Falls, WI (US);
Armen Baronian, Toronto, CA;
Piranavan Suntharalingam, Menomonee Falls, WI (US);
Mikhail Goykhman, Reseda, CA (US);
Galen Chui, Ladera Ranch, CA (US);
EATON INTELLIGENT POWER LIMITED, Dublin, IE;
Abstract
A gate drive circuit of a wide band gap power device (IGBT) includes a buffer, a di/dt sensing network, a turn-on circuit portion and turn-off circuit portion. The buffer, responsive to turn-on, supplies a first current via the first current path to the gate of the IGBT, and responsive to turn-off ceases the supply of the first current. The di/dt sensing network receives a feedback control signal representative of a voltage measurement across a parasitic inductance that exists between a Kelvin emitter and a power emitter of the IGBT. The turn-on circuit portion, responsive to turn-on and a parasitic inductance of zero volts, supplies a second current via a second current path to the gate of the IGBT. The turn-off circuit portion, responsive to turn-off and a parasitic inductance of zero volts, discharges a gate capacitance of the IGBT through both the first current path and a third current path.