The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Apr. 22, 2021
Epistar Corporation, Hsinchu, TW;
Jhih-Yong Yang, Hsinchu, TW;
Hsin-Ying Wang, Hsinchu, TW;
De-Shan Kuo, Hsinchu, TW;
Chao-Hsing Chen, Hsinchu, TW;
Yi-Hung Lin, Hsinchu, TW;
Meng-Hsiang Hong, Hsinchu, TW;
Kuo-Ching Hung, Hsinchu, TW;
Cheng-Lin Lu, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.