The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Jan. 28, 2022
Applicant:

Xiamen Sanan Optoelectronics Co., Ltd., Fujian, CN;

Inventors:

Feng Wang, Fujian, CN;

Anhe He, Fujian, CN;

Zhanggen Xia, Fujian, CN;

Ensong Nie, Fujian, CN;

Kang-Wei Peng, Fujian, CN;

Su-Hui Lin, Fujian, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/10 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/62 (2013.01);
Abstract

A flip-chip light-emitting diode (LED) includes: a substrate having a patterned surface formed with a protrusion unit including first and second protrusions; a light-emitting epitaxial layer that is disposed on the second protrusions and that includes first and second semiconductor layers and an active layer interposed therebetween; first and second electrodes connected to the first and second semiconductor layers, respectively; and a passivation layer having an epitaxial-covering portion and a substrate-covering portion. The substrate-covering portion of the passivation layer has a top surface with hillocks having a height lower than that of the second protrusions. A high-voltage light-emitting device is also disclosed.


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