The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 24, 2021
Epistar Corporation, Hsinchu, TW;
Jian-Zhi Chen, Hsinchu, TW;
Yen-Chun Tseng, Hsinchu, TW;
Hui-Fang Kao, Hsinchu, TW;
Yao-Ning Chan, Hsinchu, TW;
Yi-Tang Lai, Hsinchu, TW;
Yun-Chung Chou, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Chen Ou, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface. The first bottom surface is lower than the second bottom surface, and the first top surface is higher than the second top surface in a cross-sectional view of the semiconductor light-emitting device.