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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12230715 B1

PDFFull Text
Date of Patent:
Feb. 18, 2025

Filed:

Mar. 11, 2024

Semiconductor device and method for manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Junichi Koezuka, Tochigi, JP;

Toshinari Sasaki, Shinagawa, JP;

Katsuaki Tochibayashi, Isehara, JP;

Shunpei Yamazaki, Setagaya, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorneys:

Eric J. Robinson

Robinson Intellectual Property Law Office, P.C.

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 27/146 (2006.01); H01L 29/66 (2006.01); G02F 1/133 (2006.01); G02F 1/1333 (2006.01); G02F 1/1339 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G06F 3/041 (2006.01); H01L 27/15 (2006.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/14616 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); G02F 1/13306 (2013.01); G02F 1/133345 (2013.01); G02F 1/1339 (2013.01); G02F 1/134309 (2013.01); G02F 1/13439 (2013.01); G02F 1/136227 (2013.01); G02F 1/1368 (2013.01); G02F 2201/121 (2013.01); G06F 3/0412 (2013.01); H01L 27/14612 (2013.01); H01L 27/15 (2013.01); H10K 59/1213 (2023.02); H10K 59/124 (2023.02);
Abstract

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

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