The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Aug. 03, 2020
Fuji Electric Co., Ltd., Kawasaki, JP;
Yasuyuki Hoshi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device has an active region through which a main current flows, a gate ring region surrounding a periphery of the active region, a source ring region surrounding a periphery of the gate ring region, and a termination region surrounding a periphery of the source ring region. The semiconductor device has a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, and further, in the active region, first semiconductor regions of the first conductivity type, a gate insulating film, first gate electrodes, an interlayer insulating film, a first first-electrode, a first plating film, and a second electrode. The semiconductor device has, in the source ring region, a second first-electrode provided at a surface of the second semiconductor layer, and a second plating film provided on the second first-electrode.