The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Feb. 15, 2023
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Patrick Hauttecoeur, Saint Cyr sur Loire, FR;
Vincent Caro, Chambray les Tours, FR;
Assignee:
STMicroelectronics (Tours) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/747 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/747 (2013.01); H01L 29/0661 (2013.01); H01L 29/66386 (2013.01);
Abstract
A device includes a semiconductor substrate. A step is formed at a periphery of the semiconductor substrate. A first layer, made of polysilicon doped in oxygen, is deposited on top of and in contact with a first surface of the substrate. This first layer extends at least on a wall and bottom of the step. A second layer, made of glass, is deposited on top of the first layer and the edges of the first layer. The second layer forms a boss between the step and a central area of the device.