The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Aug. 18, 2020
Applicant:
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Inventors:
Nailong He, Wuxi, CN;
Sen Zhang, Wuxi, CN;
Assignee:
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 21/0415 (2013.01); H01L 21/76202 (2013.01); H01L 29/66492 (2013.01); H01L 29/7816 (2013.01); H01L 29/0847 (2013.01);
Abstract
A semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a semiconductor substrate. A first drift region is formed in the semiconductor substrate. A gate structure is formed on the semiconductor substrate A part of the gate structure covers a part of the first drift region. A first trench is formed in the first drift region, and a drain region is formed in the semiconductor substrate at the bottom of the first trench.