The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Jul. 24, 2020
Peking University, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
The present application discloses a UTBB photodetector pixel unit, array and method, including: a silicon film layer, a buried oxide layer, a charge collection layer and a substrate, the silicon film layer, the buried oxide layer, the charge collection layer and the substrate being arranged in sequence from top to bottom; the silicon film layer includes NMOS transistors or PMOS transistors; the charge collection layer includes charge collection control regions and charge accumulation regions; and the substrate includes an N-type substrate or a P-type substrate. A centripetal electric field is formed around the charge accumulation regions, and photo-generated charges are accumulated in the corresponding pixel units under the action of the centripetal electric field. The existence of the centripetal electric field improves the photoelectric conversion efficiency, suppresses the crosstalk between pixels, saves the area of shallow trench isolation, reduces the size, and makes it more suitable for sub-micron pixels.