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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12230626 B1

PDFFull Text
Date of Patent:
Feb. 18, 2025

Filed:

Dec. 12, 2023

Transistor

Applicant:

Japan Display Inc., Tokyo, JP;

Inventor:

Toshinari Sasaki, Minato-ku, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:

Maier & Maier, PLLC

Primary Examiner:

Chuong A Luu

Int. Cl.
CPC ...
H01L 29/06 (2006.01); G09G 3/20 (2006.01); H01L 23/482 (2006.01); H01L 23/485 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); G09G 3/20 (2013.01); H01L 23/482 (2013.01); H01L 23/485 (2013.01); H01L 29/42376 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7391 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); G09G 2300/0885 (2013.01); G09G 2330/04 (2013.01); G09G 2330/08 (2013.01); H01L 29/0688 (2013.01); H01L 29/0692 (2013.01); H01L 29/24 (2013.01);
Abstract

A diode having a simple structure and a simple manufacturing method of the diode are provided. A diode including: a semiconductor layer having a first region and a second region having a resistance lower than a resistance of the first region; a first insulating layer having a first aperture portion and a second aperture portion and covering the semiconductor layer other than the first aperture and the second aperture, the first aperture portion exposing the semiconductor layer in the first region, the second aperture portion exposing the semiconductor layer in the second region; a first conductive layer connected to the semiconductor layer in the first aperture portion and overlapping with the semiconductor layer in the first region via the first insulating layer in a planar view; and a second conductive layer connected to the semiconductor layer in the second aperture.

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Sasaki, Toshinari. (2025). Transistor (U.S. Patent No. 12230626). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12230626

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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