The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Mar. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Minjung Choi, Suwon-si, KR;

Yeonjin Lee, Suwon-si, KR;

Jeonil Lee, Suwon-si, KR;

Jongmin Lee, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/585 (2013.01); H01L 21/78 (2013.01);
Abstract

A semiconductor device includes; a semiconductor substrate including a chip area and a scribe lane area, a low-k layer on the semiconductor substrate, an interlayer insulating layer on the low-k layer, a trench area in the scribe lane area, a gap-fill insulating layer in the trench area and vertically extending from the semiconductor substrate through the low-k layer and the interlayer insulating layer to expose an upper surface of the gap-fill insulating layer through the interlayer insulating layer, and a first metal liner covering a side surface of the gap-fill insulating layer and disposed between the gap-fill insulating layer and the low-k layer and between the gap-fill insulating layer and the interlayer insulating layer.


Find Patent Forward Citations

Loading…