The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Apr. 05, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seyong Oh, Suwon-si, KR;

Kihyun Kim, Hwaseong-si, KR;

Jihwan You, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device and a data storage system including the same are provided. The semiconductor device includes a lower structure including a semiconductor substrate, a circuit element on the semiconductor substrate, a circuit interconnection structure on the semiconductor substrate, the circuit interconnection structure including a plurality of connection patterns on different levels and electrically connected to the circuit element, and a lower insulating structure covering the circuit element and the circuit interconnection structure; and an upper structure including an upper substrate in contact with an upper surface of the lower insulating structure, a stack structure on the upper substrate, the stack structure including interlayer insulating layers and gate electrodes alternately stacked in a vertical direction, and a vertical memory structure penetrating through the stack structure in the vertical direction.


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