The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Aug. 25, 2021
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Junji Kataoka, Kawasaki, JP;
Shuichi Kuboi, Yokohama, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32568 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
A plasma etching method in an embodiment includes etching a silicon-containing film by using plasma of a hydrofluorocarbon gas. The hydrofluorocarbon gas contains, as a conjugated cyclic compound, hydrofluorocarbon having a composition represented by CHF, where x, y, and z are positive integers satisfying x≥6 and (z−y)/x≤1).
Kataoka, Junji. (2025). Plasma etching method and plasma etching apparatus (U.S. Patent No. 12230504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12230504
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile