The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Jul. 06, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hyeon Cheol Park, Hwaseong-si, KR;
Daejin Yang, Seoul, KR;
Doh Won Jung, Seoul, KR;
Taewon Jeong, Yongin-si, KR;
Giyoung Jo, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/10 (2006.01); C01G 33/00 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/10 (2013.01); C01G 33/006 (2013.01); H01G 4/30 (2013.01); C01P 2002/34 (2013.01); C01P 2002/54 (2013.01); C01P 2002/72 (2013.01); C01P 2006/32 (2013.01); C01P 2006/40 (2013.01);
Abstract
Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbOternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbOternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.