The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Mar. 22, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kevin W. Brew, Niskayuna, NY (US);
Talia S. Gershon, White Plains, NY (US);
Seyoung Kim, Pohang, KR;
Jerry D. Tersoff, Rockland, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06N 3/04 (2023.01); G06N 3/065 (2023.01); G06N 3/084 (2023.01); G11C 11/54 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
G06N 3/04 (2013.01); G06N 3/065 (2023.01); G06N 3/084 (2013.01); G11C 11/54 (2013.01); G11C 13/0007 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); H10N 70/20 (2023.02); H10N 70/826 (2023.02); H10N 70/8836 (2023.02); G11C 2013/0076 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/51 (2013.01);
Abstract
Methods for setting a resistance include applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device. The memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material.