The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Aug. 12, 2020
Applicants:
Robert T. Bondokov, Latham, NY (US);
Thomas Miebach, Malta, NY (US);
Jianfeng Chen, Clifton Park, NY (US);
Takashi Suzuki, Fuji, JP;
Leo J. Schowalter, Latham, NY (US);
Inventors:
Robert T. Bondokov, Latham, NY (US);
Thomas Miebach, Malta, NY (US);
Jianfeng Chen, Clifton Park, NY (US);
Takashi Suzuki, Fuji, JP;
Leo J. Schowalter, Latham, NY (US);
Assignee:
CRYSTAL IS, INC., Green Island, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/08 (2006.01); C30B 23/02 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); C30B 23/06 (2006.01);
U.S. Cl.
CPC ...
C30B 23/08 (2013.01); C30B 23/025 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); C30B 23/06 (2013.01);
Abstract
In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.