logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12227823 B1

PDFFull Text
Date of Patent:
Feb. 18, 2025

Filed:

Nov. 12, 2019

Metal plate for producing vapor deposition masks, production method for metal plates, vapor deposition mask, production method for vapor deposition mask, and vapor deposition mask device comprising vapor deposition mask

Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Hiroki Oka, Tokyo, JP;

Sachiyo Matsuura, Tokyo, JP;

Chiaki Hatsuta, Tokyo, JP;

Chikao Ikenaga, Tokyo, JP;

Hideyuki Okamoto, Tokyo, JP;

Masato Ushikusa, Tokyo, JP;

Assignee:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Attorney:

BURR PATENT LAW, PLLC

Primary Examiner:

Ricardo D Morales

Int. Cl.
CPC ...
C22C 38/10 (2006.01); B21B 1/22 (2006.01); C21D 6/00 (2006.01); C21D 8/02 (2006.01); C21D 9/46 (2006.01); C22C 38/08 (2006.01); C23C 2/26 (2006.01); C23C 14/04 (2006.01); C23C 14/24 (2006.01); C25D 1/04 (2006.01); C25D 3/56 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); H10K 50/11 (2023.01); H10K 59/00 (2023.01); H10K 71/00 (2023.01); H10K 71/16 (2023.01); H10K 77/10 (2023.01);
U.S. Cl.
CPC ...
C22C 38/105 (2013.01); B21B 1/22 (2013.01); C21D 6/001 (2013.01); C21D 8/0205 (2013.01); C21D 8/0226 (2013.01); C21D 8/0247 (2013.01); C21D 9/46 (2013.01); C22C 38/08 (2013.01); C23C 2/26 (2013.01); C23C 14/042 (2013.01); C23C 14/24 (2013.01); C25D 1/04 (2013.01); C25D 3/562 (2013.01); G03F 7/0015 (2013.01); G03F 7/0027 (2013.01); G03F 7/0035 (2013.01); G03F 7/2008 (2013.01); G03F 7/2022 (2013.01); H10K 71/00 (2023.02); H10K 71/166 (2023.02); H10K 77/10 (2023.02); C21D 2201/05 (2013.01); H10K 50/11 (2023.02); H10K 59/00 (2023.02);
Abstract

A metal plate used for manufacturing a deposition mask has a thickness of equal to or less than 30 μm. An average cross-sectional area of the crystals grains on a cross section of the metal plate is from 0.5 μmto 50 μm. The average cross-sectional area of crystal grains is calculated by analyzing measurement results obtained by an EBSD method, the measuring results being analyzed by an area method under conditions where a portion with a difference in crystal orientation of 5 degrees or more is recognized as a crystal grain boundary.

Find Patent Forward Citations

Loading…