The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2025

Filed:

Aug. 25, 2021
Applicant:

Tsinghua University, Beijing, CN;

Inventors:

Huaqiang Wu, Beijing, CN;

Zhengwu Liu, Beijing, CN;

Jianshi Tang, Beijing, CN;

Bin Gao, Beijing, CN;

He Qian, Beijing, CN;

Assignee:

TSINGHUA UNIVERSITY, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); A61B 5/00 (2006.01); A61B 5/304 (2021.01); A61B 5/31 (2021.01);
U.S. Cl.
CPC ...
A61B 5/304 (2021.01); A61B 5/31 (2021.01); A61B 5/4094 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2213/79 (2013.01);
Abstract

A signal processing apparatus and a signal processing method are provided. The signal processing apparatus includes a memristor array, an input circuit, a first switching circuit, a second switching circuit, an output circuit, and a control circuit. The memristor array includes memristor units and is connected to source lines, word lines and bit lines. The control circuit is configured to control the first switching circuit to select at least one source line to apply at least one first signal to the at least one source line respectively, control the second switching circuit to select and activate at least one word line to apply the at least one first signal to a memristor unit corresponding to the at least one word line, and control the output circuit to output a plurality of second signals based on conductivity values of memristors of the memristor array.


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