The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Jan. 15, 2021
Rohm Co., Ltd., Kyoto, JP;
Hirotaka Otake, Kyoto, JP;
Kentaro Chikamatsu, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A method for manufacturing nitride semiconductor device includes a second step of forming, on a gate layer material film, a gate electrode film that is a material film of a gate electrode, a third step of selectively etching the gate electrode film to form the gate electrodeof a ridge shape, and a fourth step of selectively etching the gate layer material film to form a semiconductor gate layerof a ridge shape with the gate electrodedisposed at a width intermediate portion of a front surface thereof. The third step includes a first etching step for forming a first portionA from an upper end to a thickness direction intermediate portion of the gate electrodeand a second etching step being a step differing in etching condition from the first etching step and being for forming a remaining second portionB of the gate electrode.