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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12225720 B1

PDFFull Text
Date of Patent:
Feb. 11, 2025

Filed:

Nov. 19, 2021

Three-dimensional memory device with doped semiconductor bridge structures and methods for forming the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ryousuke Itou, Yokkaichi, JP;

Akihisa Sai, Yokkaichi, JP;

Kenzo Iizuka, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

THE MARBURY LAW GROUP PLLC

Primary Examiner:

Ratisha Mehta

Assistant Examiner:

Brad A Knudson

Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 21/32134 (2013.01); H01L 21/76877 (2013.01); H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H01L 23/5221 (2013.01); H01L 23/53271 (2013.01);
Abstract

A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate, and memory opening fill structures including vertical stacks of memory elements are formed through the vertically alternating sequence. Backside trenches are formed to divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers. Bridge structures are formed within each of the backside trenches. The sacrificial material layers are replaced with electrically conductive layers while the bridge structure are present within the backside trenches.

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