The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Sep. 11, 2019
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventors:

Masayuki Tanaka, Tokyo, JP;

Kentaro Fujii, Tokyo, JP;

Tatsushi Hamaguchi, Tokyo, JP;

Rintaro Koda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); H01S 5/34333 (2013.01); H01S 5/34346 (2013.01);
Abstract

There is provided a semiconductor device that comprises a layered structure configured by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor device further includes a substrate, a first light reflecting layer arranged on the first surface side of the first compound semiconductor layer, and a second light reflecting layer arranged on the second surface side of the second compound semiconductor layer. Further, the second light reflecting layer has a flat shape, a concave surface portion is formed on a substrate surface, the first light reflecting layer is formed on at least the concave surface portion, the first compound semiconductor layer is formed to extend from the substrate surface onto the concave surface portion, and a cavity is present between the first light reflecting layer and the first compound semiconductor layer.


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