The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2025

Filed:

Jul. 26, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeehwan Kim, Los Angeles, CA (US);

Ning Li, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Brent A. Wacaser, Putnam Valley, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2021.01); H01S 3/0933 (2006.01); H01S 5/026 (2006.01); H01S 5/04 (2006.01); H01S 5/11 (2021.01); H01S 5/30 (2006.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01S 5/1042 (2013.01); H01S 3/0933 (2013.01); H01S 5/041 (2013.01); H01S 5/1067 (2013.01); H01S 5/11 (2021.01); H01S 5/30 (2013.01); H01L 33/58 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0083 (2013.01); H01S 5/026 (2013.01);
Abstract

A method for forming a pumped laser structure includes forming a III-V buffer layer on a substrate including one of Si or Ge; forming a light emitting diode (LED) on the buffer layer configured to produce a threshold pump power; forming a photonic crystal layer on the LED and depositing a monolayer semiconductor nanocavity laser on the photonic crystal layer for receiving light through the photonic crystal layer from the LED with an optical pump power greater than the threshold pump power, wherein the LED and the laser are formed monolithically and the LED functions as an optical pump for the laser.


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